Z-RecTM Rectifiers and Zero-Recovery짰 Rectifiers

Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET

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600 V, 1 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

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丝印：CSD01060；Package：TO-220-2；Silicon Carbide Schottky Diode

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Silicon Carbide Schottky Diode

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ZERO RECOVERY RECTIFIER

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600 V Discrete Silicon Carbide Schottky Diodes

Low forward voltage (Vf) drop over temperatureZero reverse-recovery charge for fast switching operationsRobust MPS technologyHigh reverse-voltage blocking capability • Low forward voltage (Vf) drop over temperature\n• Zero reverse-recovery charge for fast switching operations\n• Robust MPS technology\n• High reverse-voltage blocking capability;

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Package：TO-220-2；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 600V 2.2A TO220-2

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