CS6N80A31R-G规格书供应价格华润微电子-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
CS6N80A31R-G	文件：300 bytes Page：1 Pages	300V-900V NMOS CS6N80 A31R-G, the silicon N-channel Enhanced\n\nVDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and	CRMICRO 华润微电子	CRMICRO
CS6N80A3R	文件：300 bytes Page：1 Pages	300V-900V NMOS	CRMICRO 华润微电子	CRMICRO
CS6N80A3R-G	文件：300 bytes Page：1 Pages	300V-900V NMOS	CRMICRO 华润微电子	CRMICRO
F6N80	文件：1.01814 Mbytes Page：10 Pages	N-Channel QFET짰 MOSFET 800 V, 5.5 A, 2.5 廓 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av 文件：1.01814 Mbytes 页数：10 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
F6N80	文件：1.30391 Mbytes Page：7 Pages	800V N-Channel MOSFET 文件：1.30391 Mbytes 页数：7 Pages	GOOD-ARK 固锝电子	GOOD-ARK
F6N80	文件：263.38 Kbytes Page：7 Pages	Advanced Power MOSFET(220V, 2.0OHM, 4.5A) 文件：263.38 Kbytes 页数：7 Pages	FAIRCHILD 仙童半导体	FAIRCHILD

更多CS6N80供应商更新时间2026-3-13 15:24:00