首页 >CS3815EO>规格书列表
零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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Intel짰NUCBoard | IntelIntel Corporation 英特尔 | Intel | ||
IntelNUCKitDE3815TYKHE/Intel짰NUCBoardDE3815TYBE | IntelIntel Corporation 英特尔 | Intel | ||
OperatingTemperatureRange | MuRataMurata Manufacturing Co., Ltd. 村田村田制作所 | MuRata | ||
PCBLayoutConsiderationsforVideoFilter/Drivers | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
TripleVideoD/AConverters3x8bit,150Ms/s Description FMS3810/3815productsarelow-costtripleD/Aconvertersthataretailoredtofitgraphicsandvideoapplicationswherespeediscritical.Twospeedgradesareavailable: FMS3810100Ms/s FMS3815150Ms/s TTL-levelinputsareconvertedtoanalogcurrentoutputsthatcand | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
TripleVideoD/AConverters3x8bit,150Ms/s Description FMS3810/3815productsarelow-costtripleD/Aconvertersthataretailoredtofitgraphicsandvideoapplicationswherespeediscritical.Twospeedgradesareavailable: FMS3810100Ms/s FMS3815150Ms/s TTL-levelinputsareconvertedtoanalogcurrentoutputsthatcand | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
Solidstatevoltageregulatorwith4-20mAor2-10vdccontrol | GREEGOO GREEGOO Electric Co.,Ltd | GREEGOO | ||
SurfaceMountRFPINLowDistortionAttenuatorDiodes Description TheHSMP-381xseriesisspecificallydesignedforlowdistortionattenuatorapplications.TheHSMP-481xproductsfeatureultralowparasiticinductanceintheSOT-23andSOT-323packages.Theyarespecificallydesignedforuseatfrequencieswhicharemuchhigherthantheupperlimi | AVAGOAVAGO TECHNOLOGIES LIMITED 安华高 | AVAGO | ||
SurfaceMountRFPINLowDistortionAttenuatorDiodes Description TheHSMP-381xseriesisspecificallydesignedforlowdistortionattenuatorapplications.TheHSMP-481xproductsfeatureultralowparasiticinductanceintheSOT-23andSOT-323packages.Theyarespecificallydesignedforuseatfrequencieswhicharemuchhigherthantheupperlimi | AVAGOAVAGO TECHNOLOGIES LIMITED 安华高 | AVAGO | ||
PowerMOSFET(Vdss=150V,Rds(on)=0.015ohm,Id=105A) Description TheHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,provid | IRF International Rectifier | IRF |
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