Silicon N-Channel Power MOSFET

General Description： CS2N60F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for sys

文件：448.95 Kbytes 页数：10 Pages

HUAJING-MICRO

华润微电子

Silicon N-Channel Power MOSFET

General Description： CS2N60F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for sys

文件：448.95 Kbytes 页数：10 Pages

HUAJING-MICRO

华润微电子

N型功率MOS管

CS2N60 A3H, N沟道增强型MOS产品, 采用自对准平面工艺减少开关损耗, 提高开关速度 并且增强脉冲能量. 该产品广泛应用于高效和小型化的功率开关电路中。 ●开关速度快\n● 低导通电阻(Rdson≤4.5)\n●低栅电荷 (Typical Data:8.5nC)\n●低反向传输电容(Typical:5.4pF)\n●100% 脉冲能量测试;

CRMICRO

华润微电子

300V-900V NMOS

CRMICRO

华润微电子

MOS 场效应晶体管--普通MOSFET

CRMICRO

华润微电子