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FCP13N60N

N-ChannelMOSFET600V,13A,0.258廓

Description TheSupreMOSMOSFET,Fairchild’snextgenerationofhighvoltagesuper-junctionMOSFETs,employsadeeptrenchfillingprocessthatdifferentiatesitfromprecedingmulti-epibasedtechnologies.Byutilizingthisadvancedtechnologyandpreciseprocesscontrol,SupreMOSprovidesworld

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCP13N60N

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FCPF13N60NT

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FCPF13N60NT

N-ChannelMOSFET600V,13A,0.258廓

Description TheSupreMOSMOSFET,Fairchild’snextgenerationofhighvoltagesuper-junctionMOSFETs,employsadeeptrenchfillingprocessthatdifferentiatesitfromprecedingmulti-epibasedtechnologies.Byutilizingthisadvancedtechnologyandpreciseprocesscontrol,SupreMOSprovidesworld

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FMC13N60E

N-CHANNELSILICONPOWERMOSFET

FujiFuji Electric

富士电机富士电机株式会社

FMC13N60E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=13A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.58Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FMC13N60ES

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=13A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.58Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FMC13N60ES

N-CHANNELSILICONPOWERMOSFET

FujiFuji Electric

富士电机富士电机株式会社

FMH13N60ES

N-CHANNELSILICONPOWERMOSFET

FujiFuji Electric

富士电机富士电机株式会社

FMI13N60E

N-CHANNELSILICONPOWERMOSFET

FujiFuji Electric

富士电机富士电机株式会社

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