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FIR11N90ANG

900VN-ChannelMOSFET

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半导体深圳市福斯特半导体有限公司

FMH11N90E

N-CHANNELSILICONPOWERMOSFET

FujiFuji Electric

富士电机富士电机株式会社

FML11N90

11Amps900VoltageNChannelMOSFET

FCIFirst Components International

戈采戈采企业股份有限公司

FMR11N90E

N-CHANNELSILICONPOWERMOSFET

FujiFuji Electric

富士电机富士电机株式会社

FMV11N90E

N-CHANNELSILICONPOWERMOSFET

FujiFuji Electric

富士电机富士电机株式会社

FQA11N90

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=11.4A@TC=25℃ ·DrainSourceVoltage- :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.96Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FQA11N90

900VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQA11N90

900VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQA11N90

900VN-ChannelMOSFET

ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology. ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighavalanch

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQA11N90C

900VN-ChannelMOSFET

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstand

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

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