CXG1030N

PowerAmplifierforPHS

Description TheCXG1030NisapoweramplifierforPHS.ThisICisdesignedusingtheSony’sGaAsJ-FETprocessandoperatesatasinglepowersupply. Features •Outputpower21dBm •Positivepowersupply3.0V •Lowcurrentconsumption170mA •Highpowergain39dBTyp. •Smallmoldpacka

D1030

SIL2Switch/ProximityDetectorRepeaterRelayOutputDIN-RailModelsD1030S,D1030D

Features SIL2accordingtotoIEC61508:2010(Route2H)with Tproof=5/10years(≤10/>10oftotalSIF). SC2:SystematicCapabilitySIL2. InputfromZone0(Zone20),Division1, installationinZone2,Division2. NO/NCcontact/proximityDetectorInput. TwoSPDTRelayOutpu

D1030N

Netz-GleichrichterdiodeRectifierDiode

D1030UK

GOLDMETALLISEDMULTI-PURPOSESILICONDMOSRFFET400W-28V-175MHzPUSH-PULL

DEI1030

LightingBusMappingCircuit

DEI1030-G

LightingBusMappingCircuit

DL-LS1030

REDLASERDIODE

Features •Shortwavelength:635nm(Typ.) •Highoutputpower:5mWat60°C •Lowthresholdcuttent:lth=25mA(Typ.) Applications •Bar-codescanner •Industrialequipment

DMC1030UFDB

COMPLEMENTARYPAIRENHANCEMENTMODEMOSFET

Features LowOn-Resistance LowInputCapacitance LowProfile,0.6mmMaxHeight ESDProtectedGate TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicationsrequiringspecificchangecontrol Applications LoadSwi

DMC1030UFDBQ

COMPLEMENTARYPAIRENHANCEMENTMODEMOSFET

DR1030

Shieldedpowerinductors