丝印：H2；Package：3-2A1A；TOSHIBA High-Efficiency Diodes Silicon Epitaxial Type

文件：252.23 Kbytes 页数：5 Pages

TOSHIBA

东芝

High-Efficiency Diode (HED) Silicon Diffused Junction

Applications • Radio-Frequency Rectification in Switching Regulators Features (1) Repetitive peak reverse voltage : VRRM = 200 V (2) Average forward current : IF(AV) = 0.5 A (3) Peak forward voltage : VFM = 0.95 V (max) @IFM = 0.5 A (pulse measurement) (4) Reverse recovery time : trr = 35

文件：303.43 Kbytes 页数：7 Pages

TOSHIBA

东芝

High efficiency diode (HED)

Application Scope：Switching-mode power supplies\nInternal Connection：Single\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 / 马来西亚 Average Forward Current (Single) IF(AV) 0.5 A \nRepetitive Peak Reverse Voltage VRRM 200 V ;

Toshiba

东芝

High efficiency diode (HED)

Internal Connection Single \n

Toshiba

东芝

Package：SOD-123F；包装：卷带（TR）剪切带（CT） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE GEN PURP 200V 500MA S-FLAT

Toshiba Semiconductor and Storage