900 V Bare Die Silicon Carbide MOSFETs – Gen 3

Minimum of 900V Vbr across entire operating temperature rangeHigh blocking voltage with low RDS(on)Fast intrinsic diode with low reverse recovery charge (Qrr)High-speed switching with low output capacitance • Minimum of 900V Vbr across entire operating temperature range\n• High blocking voltage with low RDS(on)\n• Fast intrinsic diode with low reverse recovery charge (Qrr)\n• High-speed switching with low output capacitance;

Wolfspeed(CREE)