Small Signal Transistor PNP - Low VCE(SAT) Transistor Chip

PROCESS DETAILS Die Size 26 x 26 MILS Die Thickness 5.9 MILS Base Bonding Pad Area 5.5 x 5.5 MILS Emitter Bonding Pad Area 5.5 x 5.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å

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Small Signal Transistor PNP - Low Noise Amplifier Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 13.7 x 13.7 MILS Die Thickness 5.9 MILS Base Bonding Pad Area 4.0 x 4.0 MILS Emitter Bonding Pad Area 5.5 x 5.5 MILS Top Side Metalization Al-Si - 30,000Å Back Side Metalization Au - 12,000Å

文件：705.35 Kbytes 页数：2 Pages

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The CP788X-2N5087 is a silicon PNP transistor designed for general purpose applications.

The CP788X-2N5087 is a silicon PNP transistor designed for general purpose applications. MECHANICAL SPECIFICATIONS: Die Size 13.7 x 13.7 MILS Die Thickness 5.9 MILS Base Bonding Pad Size 4.0 x 4.0 MILS Emitter Bonding Pad Size 5.5 x 5.5 MILS Top Side Metalization Al-Si – 17,00

文件：712.21 Kbytes 页数：3 Pages

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PNP - Low VCE(SAT) Transistor Die 1.0 Amp, 60 Volt

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PNP - Low VCE(SAT) Transistor Die 3.0 Amp, 15 Volt

文件：597.89 Kbytes 页数：4 Pages

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PNP - Low VCE(SAT) Transistor Die 3.0 Amp, 50 Volt

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PNP - General Purpose Transistor Die

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P-Channel JFET Die

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NPN - Low Noise Transistor Die

文件：496.25 Kbytes 页数：5 Pages

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PNP - High Voltage Transistor Die

文件：530.8 Kbytes 页数：9 Pages

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