Small Signal MOSFET Transistor P-Channel Enhancement-Mode MOSFET Chip

PROCESS DETAILS Die Size 22 x 17 MILS Die Thickness 5.9 MILS Gate Bonding Pad Area 3.9 x 3.9 MILS Source Bonding Pad Area 14 x 9 MILS Top Side Metalization Al-Si - 30,000Å Back Side Metalization Au - 12,000Å

文件：744.66 Kbytes 页数：2 Pages

CENTRAL

P-Channel MOSFET Die Enhancement-Mode

文件：536.68 Kbytes 页数：4 Pages

CENTRAL

Chip Form: P-Chan Enhancement Mode MOSFET

Central

panel mount piezo indicators

文件：224.61 Kbytes 页数：5 Pages

CUI

PIEZO BUZZER INDICATOR

FEATURES • through-hole tabs • threaded body • 9 Vdc rating • 3.6 kHz rated frequency selectable constant/slow pulse

文件：366.68 Kbytes 页数：3 Pages

CUID

PIEZO BUZZER INDICATOR

FEATURES • through-hole tabs • threaded body • 9 Vdc rating • 3.6 kHz rated frequency selectable constant/slow pulse

文件：390.9 Kbytes 页数：3 Pages

CUI