Small Signal Transistors NPN - Amp Switch Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 19.7 x 19.7 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 4.0 x 4.0 MILS Emitter Bonding Pad Area 4.7 x 4.7 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å

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Small Signal Transistors PNP - High Voltage Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 17.3 x 17.3 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 3.9 x 3.9 MILS Emitter Bonding Pad Area 3.9 x 3.9 MILS Top Side Metalization Al-Si - 30,000Å Back Side Metalization Au - 12,000Å

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The CP736V-2N5401 die is a PNP silicon transistor designed for high voltage amplifi er applications.

The CP736V-2N5401 die is a PNP silicon transistor designed for high voltage amplifi er applications. MECHANICAL SPECIFICATIONS: Die Size 17.3 x 17.3 MILS Die Thickness 7.1 MILS Base Bonding Pad Size 3.9 x 3.9 MILS Emitter Bonding Pad Size 3.9 x 3.9 MILS Top Side Metalization A

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