Power Transistors 8.0 Amp NPN - High Voltage Transistor Chip

PROCESS DETAILS Die Size 167 x 167 MILS Die Thickness 9.5 MILS Base Bonding Pad Area 59 x 29 MILS Emitter Bonding Pad Area 64 x 28 MILS Top Side Metalization Al - 45,000Å Back Side Metalization Ti/Ni/Ag - 3,000Å, 10,000Å, 10,000Å

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Power Transistors 8.0 Amp NPN - High Voltage Transistor Chip

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Inline Joint, ≤ 42 kV, 240 – 400 mm² Conductor, 3 Core, Polymeric, Copper Tape / Copper Wire Cable Shield, Wrap-Around Closure, RAYCHEM POLJ

Inline Joint, ≤ 42 kV, 240 – 400 mm² Conductor, 3 Core, Polymeric, Copper Tape / Copper Wire Cable Shield, Wrap-Around Closure, RAYCHEM POLJ

TE

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Chip Form: Power Transistor

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