Power Transistor NPN Darlington Transistor

PROCESS DETAILS Die Size 131 x 131 MILS Die Thickness 12.5 ±1.0 MILS Emitter Bonding Pad Area 27 x 36 MILS Base Bonding Pad Area 20 x 37 MILS Top Side Metalization Al - 50,000Å Back Side Metalization Ag - 10,000Å

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CENTRAL

Power Transistor NPN Darlington Transistor

Central

Bare die,131.000 X 131.000 mils,Darlington Power Transistor

Central

Silicon epitaxial planar type

Silicon epitaxial planar type For high-speed switching circuits ■ Features • Large repetitive peak forward current IFRM • Small terminal capacitance Ct

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PANASONIC

松下

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

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STMICROELECTRONICS

意法半导体

HIGH ENERGY SPARK GAP DEVICES

DESCRIPTION CP Clare’s TG Legacy Series of two electrode sparkgaps excel in applications that require the efficient transfer of high voltage, high energy pulses and DC overvoltage protection for magnetrons, diodes, capacitors, etc. The TG Legacy Series also includes three electrode triggered sp

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CLARE

Clare, Inc.