SW2N7002

N-channelEnhancedmodeSOT-23MOSFET

T2N7002AK

HighSpeedSwitchingApplications

○HighSpeedSwitchingApplications •ESDprotectedgate •LowON-resistanceRDS(on)=2.8Ω(typ.)(@VGS=10V) RDS(on)=3.1Ω(typ.)(@VGS=5V) RDS(on)=3.2Ω(typ.)(@VGS=4.5V)

T2N7002BK

High-SpeedSwitching

Features (1)ESD(HBM)level2kV (2)Lowdrain-sourceon-resistance :RDS(ON)=1.05Ω(typ.)(@VGS=10V) RDS(ON)=1.15Ω(typ.)(@VGS=5.0V) RDS(ON)=1.2Ω(typ.)(@VGS=4.5V) Applications •High-SpeedSwitching

TQM2N7002CU

SmallSignalN-ChannelMOSFET

FEATURES AEC-Q101Qualified Advancedtrenchcelldesign RoHScompliant Halogen-free APPLICATIONS Switchingcircuits High-speedlinedriver Low-sideloadswitch Relaydriver

TQM2N7002CX

SmallSignalN-ChannelMOSFET

FEATURES AEC-Q101Qualified Advancedtrenchcelldesign RoHScompliant Halogen-free APPLICATIONS Switchingcircuits High-speedlinedriver Low-sideloadswitch Relaydriver

TQM2N7002CX RFG

SmallSignalN-ChannelMOSFET

FEATURES AEC-Q101Qualified Advancedtrenchcelldesign RoHScompliant Halogen-free APPLICATIONS Switchingcircuits High-speedlinedriver Low-sideloadswitch Relaydriver

TQM2N7002KCU

SmallSignalN-ChannelMOSFET

FEATURES AEC-Q101Qualified Advancedtrenchcelldesign ESDprotectedG-S2kV(HBM) RoHSCompliant Halogen-free APPLICATIONS Switchingcircuits High-speedlinedriver Low-sideloadswitch Relaydriver

TQM2N7002KCX

SmallSignalN-ChannelMOSFET

FEATURES AEC-Q101Qualified Advancedtrenchcelldesign ESDprotectedG-S2kV(HBM) RoHSCompliant Halogen-free APPLICATIONS Switchingcircuits High-speedlinedriver Low-sideloadswitch Relaydriver

TSM2N7002

500VN-ChannelPowerMOSFET

TSM2N7002

60VN-ChannelEnhancementModeMOSFET