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CMT02N60

POWER FIELD EFFECT TRANSISTOR

GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new

文件:205.04 Kbytes 页数:6 Pages

CHAMP

虹冠电子

CMT02N60GN220

POWER FIELD EFFECT TRANSISTOR

GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new

文件:205.04 Kbytes 页数:6 Pages

CHAMP

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CMT02N60GN220FP

POWER FIELD EFFECT TRANSISTOR

GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new

文件:205.04 Kbytes 页数:6 Pages

CHAMP

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CMT02N60GN251

POWER FIELD EFFECT TRANSISTOR

GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new

文件:205.04 Kbytes 页数:6 Pages

CHAMP

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CMT02N60XN220

POWER FIELD EFFECT TRANSISTOR

GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new

文件:205.04 Kbytes 页数:6 Pages

CHAMP

虹冠电子

CMT02N60XN220FP

POWER FIELD EFFECT TRANSISTOR

GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new

文件:205.04 Kbytes 页数:6 Pages

CHAMP

虹冠电子

CMT02N60XN251

POWER FIELD EFFECT TRANSISTOR

GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new

文件:205.04 Kbytes 页数:6 Pages

CHAMP

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CMT-0502-75-SMT-TR

MAGNETIC BUZZER TRANSDUCER

FEATURES • surface mount • low profile • magnetic • externally driven

文件:509.1 Kbytes 页数:5 Pages

CUID

CMT-0502-75-SMT-TR

MAGNETIC BUZZER TRANSDUCER

FEATURES • surface mount • low profile • magnetic • externally driven

文件:529.15 Kbytes 页数:5 Pages

CUI

CMT-0502-75-SMT-TR_V01

MAGNETIC BUZZER TRANSDUCER

FEATURES • surface mount • low profile • magnetic • externally driven

文件:529.15 Kbytes 页数:5 Pages

CUI

技术参数

  • IDSS @25¢J (A):

    1

  • RDS(ON) @ 10V (£[) Max.:

    11.0

  • Package:

    TO-251、TO-252

供应商型号品牌批号封装库存备注价格
INF
00+
原厂原装
1000
自己公司全新库存绝对有货
询价
CET
12+
TO-252
15000
全新原装,绝对正品,公司现货供应。
询价
CHAMPION
13+
SOT-23
8387
原装分销
询价
CMT
17+
SOIC-8
6200
100%原装正品现货
询价
N/A
24+/25+
6720
原装正品现货库存价优
询价
TEMIC
23+
SOP
7000
绝对全新原装!100%保质量特价!请放心订购!
询价
SMT
2015+
TO220
19889
一级代理原装现货,特价热卖!
询价
CMT
23+
SOIC-8
23990
原装正品,假一罚十
询价
CMT
16+
SOP8
1484
全新原装现货
询价
CMT
25+
DIP-14P
18000
原厂直接发货进口原装
询价
更多CMT供应商 更新时间2025-11-28 15:44:00