POWER FIELD EFFECT TRANSISTOR

GENERAL DESCRIPTION This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy effic

文件：217.54 Kbytes 页数：7 Pages

CHAMP

虹冠电子

MAGNETIC BUZZER TRANSDUCER

FEATURES • through hole • SPL 83 dB • magnetic • externally driven

文件：414.84 Kbytes 页数：5 Pages

CUI

MAGNETIC BUZZER TRANSDUCER

FEATURES • through hole • SPL 83 dB • magnetic • externally driven

文件：394.89 Kbytes 页数：5 Pages

CUID

MAGNETIC BUZZER TRANSDUCER

FEATURES • through hole • SPL 83 dB • magnetic • externally driven

文件：414.84 Kbytes 页数：5 Pages

CUI

MAGNETIC BUZZER TRANSDUCER

FEATURES • through hole • SPL 85 dB • magnetic • externally driven

文件：442.38 Kbytes 页数：5 Pages

CUI

MAGNETIC BUZZER TRANSDUCER

FEATURES • through hole • SPL 85 dB • magnetic • externally driven

文件：422.24 Kbytes 页数：5 Pages

CUID

MAGNETIC BUZZER TRANSDUCER

FEATURES • through hole • SPL 85 dB • magnetic • externally driven

文件：442.38 Kbytes 页数：5 Pages

CUI

MAGNETIC BUZZER TRANSDUCER

FEATURES • surface mount • low profile • magnetic • externally driven

文件：413.85 Kbytes 页数：5 Pages

CUI

MAGNETIC BUZZER TRANSDUCER

FEATURES • surface mount • low profile • magnetic • externally driven

文件：394.87 Kbytes 页数：5 Pages

CUID

MAGNETIC BUZZER TRANSDUCER

FEATURES • surface mount • low profile • magnetic • externally driven

文件：413.85 Kbytes 页数：5 Pages

CUI