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CMT02N60GN251中文资料PDF规格书
CMT02N60GN251规格书详情
GENERAL DESCRIPTION FEATURES
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy
efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage
transients.
FEATURES
Robust High Voltage Termination
Avalanche Energy Specified
Source-to-Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSSand VDS(on) Specified at Elevated Temperature
产品属性
- 型号:
CMT02N60GN251
- 功能描述:
POWER FIELD EFFECT TRANSISTOR
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
CHAMPION |
21+ROHS |
TO252 |
28888 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
CHAMP |
23+ |
原厂原包 |
19960 |
只做进口原装 终端工厂免费送样 |
询价 | ||
E |
23+ |
TO- |
6000 |
原装正品,支持实单 |
询价 | ||
CMOS |
24+25+/26+27+ |
TO-220-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
E |
22+ |
TO- |
25000 |
只做原装进口现货,专注配单 |
询价 | ||
VBSEMI |
19+ |
TO- |
29600 |
绝对原装现货,价格优势! |
询价 | ||
E |
23+ |
TO- |
10000 |
公司只做原装正品 |
询价 | ||
E |
22+ |
TO- |
6000 |
十年配单,只做原装 |
询价 | ||
VB |
2019 |
TO- |
55000 |
绝对原装正品假一罚十! |
询价 | ||
虹冠(台湾) |
23+ |
TO-220F |
4000 |
正品原装货价格低qq:2987726803 |
询价 |