2 W, 0.2 - 6.0 GHz, GaN HEMT MMIC Power Amplifier

Description Wolfspeed’s CMPA0060002D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drif

文件：1.01219 Mbytes 页数：8 Pages

WOLFSPEED

2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier

Description Wolfspeed’s CMPA0060002F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drif

文件：2.26577 Mbytes 页数：10 Pages

WOLFSPEED

2 W, DC - 6.0 GHz, GaN MMIC Power Amplifier

Description Wolfspeed’s CMPA0060002F1 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron dri

文件：1.12525 Mbytes 页数：10 Pages

WOLFSPEED

2 Watt, 20 MHz - 6000 MHz GaN HEMT MMIC Power Amplifier

文件：417.49 Kbytes 页数：7 Pages

Cree

科锐

2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier

文件：961.69 Kbytes 页数：9 Pages

Cree

科锐

2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier

文件：961.69 Kbytes 页数：9 Pages

Cree

科锐

2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier

文件：961.69 Kbytes 页数：9 Pages

Cree

科锐

2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier

The CMPA0060002 is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher therm ·17 dB Small Signal Gain\n·3 W Typical PSAT\n·Operation up to 28 V\n·High Breakdown Voltage\n·High Temperature Operation;

MACOM

2 W, DC - 6.0 GHz, GaN MMIC Power Amplifier

The CMPA0060002 is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher therm ·17 dB Small Signal Gain\n·3 W Typical PSAT\n·Operation up to 28 V\n·High Breakdown Voltage\n·High Temperature Operation;

MACOM

2 W, DC - 6.0 GHz, GaN MMIC Power Amplifier

The CMPA0060002 is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher therm ·17 dB Small Signal Gain\n·3 W Typical PSAT\n·Operation up to 28 V\n·High Breakdown Voltage\n·High Temperature Operation;

MACOM