MOS

CMOS

场效应

TMOS POWER FET 9.0 AMPERES 250 VOLTS

TheD2PAK package has the capability of housing a larger die thanany existing surface mount package which allows it to be used inapplications that require theuse of surface mount components withhigher power and lower RDS(on)capabilities. This high voltage MOSFETuses an advanced termination scheme

文件：258.75 Kbytes 页数：10 Pages

MOTOROLA

摩托罗拉

TMOS POWER FET 9.0 AMPERES 250 VOLTS RDS(on) = 0.45 OHM

TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low v

文件：206.33 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

TMOS POWER FET 9.0 AMPERES 250 VOLTS RDS(on) = 0.45 OHM

TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low v

文件：206.33 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉