MTB9N25E中文资料PDF规格书
MTB9N25E规格书详情
TheD2PAK package has the capability of housing a larger die thanany existing surface mount package which allows it to be used inapplications that require theuse of surface mount components withhigher power and lower RDS(on)capabilities. This high voltage MOSFETuses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FETis designedto withstand high energy in the avalanche and commutation modes. This new energyefficient design also offers a
drain–to–sourcediode witha fast recovery time. Designed for low voltage,high speedswitching applications in power supplies, convertersand PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating safeoperating areas are critical and offer additional safety margin against unexpected voltage transients.
• Avalanche Energy Capability Specified at Elevated Temperature
• Low Stored Gate Charge for Efficient Switching
• Internal Source–to–Drain Diode Designed to Replace External Zener Transient Suppressor
Absorbs High Energy in the Avalanche Mode
• Source–to–Drain Diode Recovery time Comparable to Discrete Fast Recovery Diode
产品属性
- 型号:
MTB9N25E
- 制造商:
Rochester Electronics LLC
- 功能描述:
- Bulk
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ON/安森美 |
21+ |
9852 |
只做原装正品现货!或订货假一赔十! |
询价 | |||
ON/安森美 |
23+ |
TO-263 |
6000 |
原装正品,支持实单 |
询价 | ||
HAMOS/汉姆 |
SOP-8 |
265209 |
假一罚十原包原标签常备现货! |
询价 | |||
ON |
21+ |
35200 |
一级代理/放心采购 |
询价 | |||
TDK-东电化 |
24+25+/26+27+ |
车规-被动器件 |
76800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
MOTOROLA |
22+ |
TO-263 |
3000 |
原装正品,支持实单 |
询价 | ||
ON |
23+ |
TO-263 |
6893 |
询价 | |||
ON |
23+ |
TO-263 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
ON/安森美 |
2024+实力库存 |
350 |
只做原厂渠道 可追溯货源 |
询价 | |||
ON/安森美 |
2022+ |
30000 |
进口原装现货供应,原装 假一罚十 |
询价 |