CMD12P10资料使用说明书批发供应场效应CMOS-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
CMD12P10	文件：300 bytes Page：1 Pages	MOS	CMOS 场效应	CMOS
CMD12P10S	文件：300 bytes Page：1 Pages	MOS	CMOS 场效应	CMOS
FQB12P10	文件：635.79 Kbytes Page：9 Pages	100V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs 文件：635.79 Kbytes 页数：9 Pages	Fairchild 仙童半导体	Fairchild
FQB12P10	文件：333.33 Kbytes Page：2 Pages	isc P-Channel MOSFET Transistor FEATURES ·Drain Current –ID=-11.5A@ TC=25℃ ·Drain Source Voltage- : VDSS=-100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.29Ω(Max)@VGS= -10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D 文件：333.33 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
FQD12P10	文件：624.66 Kbytes Page：9 Pages	100V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs 文件：624.66 Kbytes 页数：9 Pages	Fairchild 仙童半导体	Fairchild

更多CMD12P10供应商更新时间2025-12-18 16:46:00