CMD12P10资料使用说明书批发供应场效应CMOS-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
CMD12P10	文件：300 bytes Page：1 Pages	MOS	CMOS 场效应	CMOS
CMD12P10S	文件：300 bytes Page：1 Pages	MOS	CMOS 场效应	CMOS
FQP12P10	文件：550.92 Kbytes Page：8 Pages	100V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs 文件：550.92 Kbytes 页数：8 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
FQPF12P10	文件：631.02 Kbytes Page：8 Pages	100V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs 文件：631.02 Kbytes 页数：8 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
MTP12P10	文件：190.94 Kbytes Page：6 Pages	TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.3 OHM Power Field Effect Transistor P-Channel Enhancement-Mode Silicon Gate 文件：190.94 Kbytes 页数：6 Pages	MOTOROLA 摩托罗拉	MOTOROLA

更多CMD12P10供应商更新时间2026-10-20 9:29:00