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CZT5551

NPNSiliconTransistor

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

CZT5551

EpitaxialPlanarTransistor

Description TheCZT5551isdesignedforgeneralpurposeapplicationsrequiringhighbreakdownvoltages.

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

CZT5551

SOT-223Plastic-EncapsulateTransistors

FEATURES HighVoltage HighVoltageAmplifierApplication

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

CZT5551

NPNSiliconEpitaxialPlanarTransistor

Features HighVoltage HighVoltageAmplifierApplication

TECHPUBLICTECH PUBLIC Electronics co LTD

台舟电子台舟电子股份有限公司

CZT5551-C

NPNSiliconMediumPowerTransistor

FEATURES •HighVoltageAmplifierApplication •HighVoltage

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

CZT5551E

ENHANCEDSPECIFICATIONSURFACEMOUNTNPNSILICONTRANSISTOR

DESCRIPTION: TheCENTRALSEMICONDUCTORCZT5551EisanNPNSiliconTransistor,packagedinanSOT-223case,designedforgeneralpurposeamplifierapplicationsrequiringhighbreakdownvoltage. MARKINGCODE:FULLPARTNUMBER FEATURES: •HighCollectorBreakdownVoltage250V •LowLeakageCurre

CentralCentral Semiconductor Corp

美国中央半导体

CZT5551HC

SURFACEMOUNTHIGHCURRENTSILICONNPNTRANSISTOR

DESCRIPTION: TheCENTRALSEMICONDUCTORCZT5551HCtypeisahighcurrentNPNsilicontransistormanufacturedbytheepitaxialplanarprocess,epoxymoldedinasurfacemountpackage,designedforhighvoltageandhighcurrentamplifierapplications.

CentralCentral Semiconductor Corp

美国中央半导体

DMBT5551

TECHNICALSPECIFICATIONSOFNPNEPITAXIALPLANARTRANSISTOR

DCCOM

Dc Components

DMMT5551

MATCHEDNPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

Features •EpitaxialPlanarDieConstruction •ComplementaryPNPTypeAvailable(DMMT5401) •IdealforLowPowerAmplificationandSwitching •IntrinsicallyMatchedNPNPair(Note1) •2MatchedTolerance,hFE,VCE(SAT),VBE(SAT) •LeadFree/RoHSCompliant(Note4) •GreenDevice(Note5an

DIODESDiodes Incorporated

美台半导体

DMMT5551

MATCHEDNPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

DIODESDiodes Incorporated

美台半导体

详细参数

  • 型号:

    CMBT5551-T

  • 功能描述:

    两极晶体管 - BJT NPN 0.6A 160V HV

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    PNP 集电极—基极电压

  • VCBO:

    集电极—发射极最大电压

  • VCEO:

    - 40 V 发射极 - 基极电压

  • VEBO:

    - 6 V

  • 增益带宽产品fT:

    直流集电极/Base Gain hfe

  • Min:

    100 A

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    PowerFLAT 2 x 2

供应商型号品牌批号封装库存备注价格
三年内
1983
只做原装正品
询价
空白
SOT-23
68500
一级代理 原装正品假一罚十价格优势长期供货
询价
华昕
23+
20000
正品原装货价格低
询价
CDIL
23+
原厂正规渠道
5000
专注配单,只做原装进口现货
询价
CDIL
23+
原厂正规渠道
5000
专注配单,只做原装进口现货
询价
CENTRAL
24+
SOT-23
66200
新进库存/原装
询价
GENERAL
24+
SOT-23
90000
进口原装现货假一罚十价格合理
询价
CDIL
25+
SOT-23SC-59
9000
原装正品,假一罚十!
询价
SUMIDDA
24+
SMD
11016
公司现货库存,支持实单
询价
CERTIRED
24+
SOT-23SC-59
5000
只做原装公司现货
询价
更多CMBT5551-T供应商 更新时间2025-7-27 9:19:00