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HEF4069UBD

Hexinverter

DESCRIPTION TheHEF4069UBisageneralpurposehexinverter.Eachofthesixinvertersisasinglestage.

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

HEF4069UBF

Hexinverter

DESCRIPTION TheHEF4069UBisageneralpurposehexinverter.Eachofthesixinvertersisasinglestage.

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

HEF4069UBN

Hexinverter

DESCRIPTION TheHEF4069UBisageneralpurposehexinverter.Eachofthesixinvertersisasinglestage.

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

HEF4069UBP

Hexinverter

DESCRIPTION TheHEF4069UBisageneralpurposehexinverter.Eachofthesixinvertersisasinglestage.

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

HEF4069UBT

Hexinverter

DESCRIPTION TheHEF4069UBisageneralpurposehexinverter.Eachofthesixinvertersisasinglestage.

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

HEF4069UBT

Hexunbufferedinverter

1.Generaldescription TheHEF4069UBisahexunbufferedinverter.Inputsincludeclampdiodes.Thisenablestheuseof currentlimitingresistorstointerfaceinputstovoltagesinexcessofVDD. 2.Featuresandbenefits •Widesupplyvoltagerangefrom3.0Vto15.0V •CMOSlowpowerdissi

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

HEF4069UBTT

Hexunbufferedinverter

1.Generaldescription TheHEF4069UBisahexunbufferedinverter.Inputsincludeclampdiodes.Thisenablestheuseof currentlimitingresistorstointerfaceinputstovoltagesinexcessofVDD. 2.Featuresandbenefits •Widesupplyvoltagerangefrom3.0Vto15.0V •CMOSlowpowerdissi

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

HM4069

1-4lithium/lead-acidbatteryswitchtypeChargingmanagementchip

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

IRGP4069D-EPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features •LowVCE(ON)TrenchIGBTTechnology •LowSwitchingLosses •MaximumJunctionTemperature175°C •5μSshortcircuitSOA •SquareRBSOA •100ofThePartsTestedforILM •PositiveVCE(ON)TemperatureCoefficient •TightParameterDistribution •LeadFreePackage Benefits •

IRF

International Rectifier

IRGP4069DPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features •LowVCE(ON)TrenchIGBTTechnology •LowSwitchingLosses •MaximumJunctionTemperature175°C •5μSshortcircuitSOA •SquareRBSOA •100ofThePartsTestedforILM •PositiveVCE(ON)TemperatureCoefficient •TightParameterDistribution •LeadFreePackage Benefits •

IRF

International Rectifier

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