ENA1170

N-ChannelSiliconMOSFETGeneral-PurposeSwitchingDeviceApplications

General-PurposeSwitchingDeviceApplications Features •TheEMH2408incorporatesaN-channelMOSFETthatfeaturelowON-resistanceandultrahigh-speedswitching,therebyenablinghigh-densitymounting •1.8Vdrive •Halogenfreecompliance

ENA1170A

General-PurposeSwitchingDeviceApplications

F1170

PATENTEDGOLDMETALIZEDSILICONGATEENHANCEMENTMODERFPOWERVDMOSTRANSISTOR???

GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfetprocessfeaturesgoldmetalforgreatlyextendedlifetime

FT-1170

FANTRAYASSEMBLY

GLSAR1170

SURFCOIL짰SMTINDUCTORSANDTRANSFORMERS(PROFESSIONALGRADE)

ICF-1170I

IndustrialCAN-to-fiberconverters

ICF-1170I-M-ST

IndustrialCAN-to-fiberconverters

ICF-1170I-M-ST-T

IndustrialCAN-to-fiberconverters

K1170

SiliconN-ChannelMOSFET

•Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •SuitableforswitchingregulatorandDC-DCconverter

KTC1170

EPITAXIALPLANARNPNTRANSISTOR(HIGH-DEFINITIONCRTDISPLAYVIDEOOUTPUT)

HIGH-DEFINITIONCRTDISPLAY. VIDEOOUTPUTAPPLICATION. FEATURES •HighVoltage:VCEO=200V. •highTransitionFrequency:fT=150MHz(Typ.) •LowCollectorOutputCapacitance:Cob=1.7pF(Typ.)