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ENA1170

N-Channel Silicon MOSFET General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • The EMH2408 incorporates a N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting • 1.8V drive • Halogen free compliance

文件:100.21 Kbytes 页数:4 Pages

SANYO

三洋

ENA1170A

General-Purpose Switching Device Applications

文件:511.82 Kbytes 页数:7 Pages

SANYO

三洋

F1170

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR???

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

文件:43.4 Kbytes 页数:2 Pages

POLYFET

NTE1170

Integrated Circuit Dual Preamp for Car Radio

Features: • Fewer Peripheral Parts • Low Noise • 8–Lead SIP Type Package

文件:20.46 Kbytes 页数:2 Pages

NTE

TDA1170N

LOW-NOISE TV VERTICAL DEFLECTION SYSTEM

DESCRIPTION The TDA1170N is a monolithic integrated circuit in a 12-lead quad in-line plastic package. It is in tended for use in black and white and colour TV receivers. Low-noise makes this device particularly suitable for use in monitors. The functions incorporated are : synchronizatio

文件:201.62 Kbytes 页数:8 Pages

STMICROELECTRONICS

意法半导体

详细参数

  • 型号:

    ENA1170

  • 制造商:

    SANYO

  • 制造商全称:

    Sanyo Semicon Device

  • 功能描述:

    N-Channel Silicon MOSFET General-Purpose Switching Device Applications

供应商型号品牌批号封装库存备注价格
rf-bay
24+
模块
400
询价
RFbay
700
询价
SIS
23+
BGA
5000
原装正品,假一罚十
询价
SIS
22+
BGA
2000
进口原装!现货库存
询价
SIS
23+
BGA
33888
##公司主营品牌长期供应100%原装现货可含税提供技术
询价
VB
2026+
SC-88A
17585
原装正品 假一罚十!
询价
VBSEMI/台湾微碧
23+
SC-88A
50000
全新原装正品现货,支持订货
询价
VBSEMI/台湾微碧
24+
SC-88A
60000
询价
BOUR
23+
1010
询价
Bourns
25+
N/A
18746
样件支持,可原厂排单订货!
询价
更多ENA1170供应商 更新时间2026-4-14 16:56:00