首页 >CL9010L>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
ICofcollectorelectricmotorcontroller | INTEGRAL Integral Corp. | INTEGRAL | ||
HEXFET짰TRANSISTORSP-CHANNELHEXDIP? HEXFET®TRANSISTORSP-CHANNELHEXDIP™ 1-WATTTRATEDPOWERMOSFETsINA4-PIN,DUAL-IN-LINEPACKAGE FEATURES ■ForAutomaticInsertion ■Compact,EndStackable ■FastSwitching ■LowDriveCurrent ■EasyParalleled ■ExcellentTemperatureStability ■P-ChannelVersatility | IRF International Rectifier | IRF | ||
PowerMOSFET DESCRIPTION TheHVMDIPtechnologyisthekeytoVishay’sadvancedlineofpowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingoftheHVMDIPdesignachievesverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. FEATURES •ForAutomatic | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
P-CHANNELPOWERMOSFETS FEATURES •LowerRDS(ON) •Improvedinductiveruggedness •Fastswitchingtimes •Ruggedpolysilicongatecellstructure •Lowerinputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability | SamsungSamsung semiconductor 三星三星半导体 | Samsung | ||
iscP-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerMOSFET DESCRIPTION ThepowerMOSFETtechnologyisthekeytoVishay’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyandd | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancheratings •Surface-mount(IRFR9010,SiHFR9010) •Straightlead(IRFU9010,SiHFU9010) •Simpledriverequirements •Easeofparalleling •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 DESCR | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET DESCRIPTION ThepowerMOSFETtechnologyisthekeytoVishay’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyandd | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancheratings •Surface-mount(IRFR9010,SiHFR9010) •Straightlead(IRFU9010,SiHFU9010) •Simpledriverequirements •Easeofparalleling •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 DESCR | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancheratings •Surface-mount(IRFR9010,SiHFR9010) •Straightlead(IRFU9010,SiHFU9010) •Simpledriverequirements •Easeofparalleling •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 DESCR | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay |
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