20-40GHz High Gain Buffer Amplifier

Description The CHA2098b is a high gain broadband three stage monolithic buffer amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. Main Featur

文件：106.06 Kbytes 页数：8 Pages

UMS

20-40GHz High Gain Buffer Amplifier

Description The CHA2098b is a high gain broadband three stage monolithic buffer amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. Main Featur

文件：106.06 Kbytes 页数：8 Pages

UMS

20-40GHz High Gain Buffer Amplifier

Description The CHA2098b is a high gain broadband three stage monolithic buffer amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. Main Featur

文件：106.06 Kbytes 页数：8 Pages

UMS

20-33GHz High Gain Buffer Amplifier

Description The monolithic microwave IC (MMIC) in the package is a high gain broadband three stage monolithic buffer amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a PM-HEMT process, 0.25µm gate lengt

文件：163.09 Kbytes 页数：6 Pages

UMS

20-33GHz High Gain Buffer Amplifier

Description The monolithic microwave IC (MMIC) in the package is a high gain broadband three stage monolithic buffer amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a PM-HEMT process, 0.25µm gate lengt

文件：163.09 Kbytes 页数：6 Pages

UMS

20-33GHz High Gain Buffer Amplifier

Description The monolithic microwave IC (MMIC) in the package is a high gain broadband three stage monolithic buffer amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a PM-HEMT process, 0.25µm gate lengt

文件：163.09 Kbytes 页数：6 Pages

UMS

55-60GHz Low Noise / Medium Power Amplifier

Description The CHA2157 is a two stages low noise and medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounded. This helps simplify the assembly process. Main Features

文件：112 Kbytes 页数：6 Pages

UMS

55-60GHz Low Noise / Medium Power Amplifier

Description The CHA2157 is a two stages low noise and medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounded. This helps simplify the assembly process. Main Features

文件：112 Kbytes 页数：6 Pages

UMS

55-60GHz Low Noise / Medium Power Amplifier

Description The CHA2157 is a two stages low noise and medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounded. This helps simplify the assembly process. Main Features

文件：112 Kbytes 页数：6 Pages

UMS

55-65GHz Low Noise / Medium Power Amplifier

55-65GHz Low Noise / Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA2159 is a four - stage low noise and medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The bac

文件：203.17 Kbytes 页数：6 Pages

UMS