36-40GHz Low Noise Amplifier

Description The CHA2091 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form. Main Features ■ Broad

文件：115.85 Kbytes 页数：8 Pages

UMS

36-40GHz Low Noise Amplifier

Description The CHA2091 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form. Main Features ■ Broad

文件：115.85 Kbytes 页数：8 Pages

UMS

18-32GHz Low Noise Amplifier

Description The CHA2092 is a high gain broadband threestage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC ground. This helps simplify the assembly process. Self biasing

文件：87.11 Kbytes 页数：6 Pages

UMS

18-32GHz Low Noise Amplifier

Description The CHA2092 is a high gain broadband threestage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC ground. This helps simplify the assembly process. Self biasing

文件：87.11 Kbytes 页数：6 Pages

UMS

18-32GHz Low Noise Amplifier

Description The CHA2092 is a high gain broadband threestage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC ground. This helps simplify the assembly process. Self biasing

文件：87.11 Kbytes 页数：6 Pages

UMS

20-30GHz Low Noise Amplifier

Description The CHA2093 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. Main Features ■ Broad band performance 20-30GHz ■ 2.

文件：107.46 Kbytes 页数：8 Pages

UMS

20-30GHz Low Noise Amplifier

Description The CHA2093 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. Main Features ■ Broad band performance 20-30GHz ■ 2.

文件：107.46 Kbytes 页数：8 Pages

UMS

20-30GHz Low Noise Amplifier

Description The CHA2093 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. Main Features ■ Broad band performance 20-30GHz ■ 2.

文件：107.46 Kbytes 页数：8 Pages

UMS

20-30GHz Low Noise Amplifier

Description The monolithic microwave IC (MMIC) in the package is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard PHEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. Main Features

文件：186.34 Kbytes 页数：8 Pages

UMS

20-30GHz Low Noise Amplifier

Description The monolithic microwave IC (MMIC) in the package is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard PHEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. Main Features

文件：186.34 Kbytes 页数：8 Pages

UMS