18-31GHz Low Noise Amplifier

Description The circuit is a three-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. Main Features • Broad band performance

文件：167 Kbytes 页数：8 Pages

UMS

18-31GHz Low Noise Amplifier

Description The circuit is a three-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. Main Features • Broad band performance

文件：167 Kbytes 页数：8 Pages

UMS

18-30GHz Low Noise Amplifier

Description The CHA2069-QDG is a three-stage selfbiased wide band monolithic low noise amplifier. Typical applications range from telecommunication (point to point, point to multipoint, VSAT) to ISM and military markets. Main Features ■ Broadband performance 18-30GHz ■ 3dB noise figure ■ 20dB

文件：439.47 Kbytes 页数：18 Pages

UMS

18-31GHz Low Noise Amplifier

Description The monolithic microwave IC (MMIC) in the package is a three-stage self biased wide band monolithic low noise amplifier. The MMIC is manufactured with a standard PM-HEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. Mai

文件：171.64 Kbytes 页数：7 Pages

UMS

18-31GHz Low Noise Amplifier

Description The monolithic microwave IC (MMIC) in the package is a three-stage self biased wide band monolithic low noise amplifier. The MMIC is manufactured with a standard PM-HEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. Mai

文件：171.64 Kbytes 页数：7 Pages

UMS

18-31GHz Low Noise Amplifier

Description The monolithic microwave IC (MMIC) in the package is a three-stage self biased wide band monolithic low noise amplifier. The MMIC is manufactured with a standard PM-HEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. Mai

文件：171.64 Kbytes 页数：7 Pages

UMS

17-24GHz Low Noise Amplifier

Description The CHA2090 is a three-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form. Mai

文件：130.83 Kbytes 页数：8 Pages

UMS

17-24GHz Low Noise Amplifier

Description The CHA2090 is a three-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form. Mai

文件：130.83 Kbytes 页数：8 Pages

UMS

17-24GHz Low Noise Amplifier

Description The CHA2090 is a three-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form. Mai

文件：130.83 Kbytes 页数：8 Pages

UMS

36-40GHz Low Noise Amplifier

Description The CHA2091 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form. Main Features ■ Broad

文件：115.85 Kbytes 页数：8 Pages

UMS