零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscSiliconNPNPowerTransistor DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES •AvalancheRuggedTechnology •RuggedGateOxideTechnology •LowerInputCapacitance •ImprovedGateCharge •ExtendedSafeOperatingArea | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
AdvancedPowreMOSFET FEATURES ♦AvalancheRuggedTechnology ♦RuggedGateOxideTechnology ♦LowerInputCapacitance ♦ImprovedGateCharge ♦ExtendedSafeOperatingArea ♦LowerLeakageCurrent:10µA(Max.)@VDS=500V ♦LowerRDS(ON):0.638Ω(Typ.) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
500VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-CHANNELPOWERMOSFETFORHI-RELAPPLICATIONS | SEME-LAB Seme LAB | SEME-LAB | ||
POWERMOSFETTHRU-HOLE(TO-257AA) POWERMOSFETTHRU-HOLE(TO-257AA) HEXFET®MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-e | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
SimpleDriveRequirements | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
POWERMOSFETTHRU-HOLE(TO-257AA) POWERMOSFETTHRU-HOLE(TO-257AA) HEXFET®MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-e | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
N-ChannelMOSFETinaHermeticallysealed | SEME-LAB Seme LAB | SEME-LAB | ||
POWERMOSFETN-CHANNEL(BVdss=500V,Rds(on)=0.85ohm,Id=7.0A) POWERMOSFETTHRU-HOLE(TO-257AA) HEXFET®MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-e | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
POWERMOSFETTHRU-HOLE(TO-257AA) POWERMOSFETTHRU-HOLE(TO-257AA) HEXFET®MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-e | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
POWERMOSFETTHRU-HOLE(TO-257AA) POWERMOSFETTHRU-HOLE(TO-257AA) HEXFET®MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-e | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=500V,@Vge=15V,Ic=22A) Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
FitRate/EquivalentDeviceHours | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
FitRate/EquivalentDeviceHours | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=500V,@Vge=15V,Ic=22A) Introduction Thereliabilityreportisasummaryofthetestdatacollatedsincetheimplementationofthereliabilityprogramme.Thisreportwillbeperiodicallyupdatedtypicallyonaquarterlybasis.Futurepublicationsofthisreportwillalsoincludeasappropriateadditionalinformationto | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
OPICLIGHTDETECTORWITHBUILTINSIGNALPROCESS-INGCURCUITFORLIGHTMODULATIONSYSTEM | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司(SMA) | SHARP | ||
OPICLIGHTDETECTORWITHBUILTINSIGNALPROCESS-INGCURCUITFORLIGHTMODULATIONSYSTEM | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司(SMA) | SHARP | ||
iscSiliconNPNPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=60V(Min.) ·LowCollectorSaturationVoltage :VCE(sat)=1.1V(Max.)@IC=5A ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Designedforlowfrequencypoweramplifierapplicatio | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
BroadbandMillimeterMixer6to40GHz | AACAmerican Accurate Components, Inc. 美国精密部件公司美国精密元件有限公司 | AAC |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
WCH |
1936 |
SOP-16 |
27000 |
询价 | |||
WCH(南京沁恒) |
2020+ |
原厂原装正品 |
8000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
WCH(南京沁恒) |
2021+ |
原厂原封装 |
93628 |
原装进口现货 假一罚百 |
询价 | ||
WCH |
21+ |
SOP16 |
26982 |
专营原装正品现货,当天发货,可开发票! |
询价 | ||
WCH(南京沁恒) |
21+ |
10560 |
十年专营,原装现货,假一赔十 |
询价 | |||
WCH/沁恒 |
22+23+ |
SOP |
61583 |
假一罚十全新原装现货0755-82732291 |
询价 | ||
WCH |
23/22+ |
SOP16 |
141 |
代理渠道.实单必成 |
询价 | ||
WCH |
1408+ |
SOP16 |
9500 |
绝对原装进口现货可开增值税发票 |
询价 | ||
WCH |
2017+ |
SOP-16 |
45896 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
询价 | ||
WCH |
19+ |
SOP-16 |
67850 |
原厂代理渠道,每一颗芯片都可追溯原厂; |
询价 |
相关规格书
更多- CH440P
- CH442E
- CH444G
- CH446Q
- CH447
- CH450
- CH450H
- CH451
- CH451H-30PT
- CH451N1PT
- CH452
- CH452L
- CH453A
- CH454
- CH454S
- CH455
- CH455G
- CH455H
- CH455K
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- CH456K
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- CH494WSPT
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相关库存
更多- CH440R
- CH443K
- CH446
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- CH451L
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- CH452A
- CH453
- CH453S
- CH454A
- CH455
- CH455G
- CH455H
- CH455K
- CH456
- CH456H
- CH456M
- CH457B
- CH457S
- CH462
- CH462X
- CH463Q
- CH467060
- CH468026
- CH468125
- CH480KPT
- CH481KPT
- CH483KPT
- CH491DPT
- CH493DPT
- CH494N1PT
- CH495DPT
- CH-50
- CH5001A-L
- CH5008
- CH500H-40PT
- CH501H-40PT
- CH508026
- CH508125
- CH51
- CH5101A-L