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IRFS440

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFS440A

iscSiliconNPNPowerTransistor

DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES •AvalancheRuggedTechnology •RuggedGateOxideTechnology •LowerInputCapacitance •ImprovedGateCharge •ExtendedSafeOperatingArea

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFS440A

AdvancedPowreMOSFET

FEATURES ♦AvalancheRuggedTechnology ♦RuggedGateOxideTechnology ♦LowerInputCapacitance ♦ImprovedGateCharge ♦ExtendedSafeOperatingArea ♦LowerLeakageCurrent:10µA(Max.)@VDS=500V ♦LowerRDS(ON):0.638Ω(Typ.)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRFS440B

500VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRFY440

N-CHANNELPOWERMOSFETFORHI-RELAPPLICATIONS

SEME-LAB

Seme LAB

IRFY440

POWERMOSFETTHRU-HOLE(TO-257AA)

POWERMOSFETTHRU-HOLE(TO-257AA) HEXFET®MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-e

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFY440C

SimpleDriveRequirements

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFY440C

POWERMOSFETTHRU-HOLE(TO-257AA)

POWERMOSFETTHRU-HOLE(TO-257AA) HEXFET®MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-e

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFY440C

N-ChannelMOSFETinaHermeticallysealed

SEME-LAB

Seme LAB

IRFY440CM

POWERMOSFETN-CHANNEL(BVdss=500V,Rds(on)=0.85ohm,Id=7.0A)

POWERMOSFETTHRU-HOLE(TO-257AA) HEXFET®MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-e

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFY440CM

POWERMOSFETTHRU-HOLE(TO-257AA)

POWERMOSFETTHRU-HOLE(TO-257AA) HEXFET®MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-e

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFY440M

POWERMOSFETTHRU-HOLE(TO-257AA)

POWERMOSFETTHRU-HOLE(TO-257AA) HEXFET®MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-e

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRGB440U

INSULATEDGATEBIPOLARTRANSISTOR(Vces=500V,@Vge=15V,Ic=22A)

Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRGB440U

FitRate/EquivalentDeviceHours

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRGP440U

FitRate/EquivalentDeviceHours

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRGP440U

INSULATEDGATEBIPOLARTRANSISTOR(Vces=500V,@Vge=15V,Ic=22A)

Introduction Thereliabilityreportisasummaryofthetestdatacollatedsincetheimplementationofthereliabilityprogramme.Thisreportwillbeperiodicallyupdatedtypicallyonaquarterlybasis.Futurepublicationsofthisreportwillalsoincludeasappropriateadditionalinformationto

IRFInternational Rectifier

英飞凌英飞凌科技公司

IS440

OPICLIGHTDETECTORWITHBUILTINSIGNALPROCESS-INGCURCUITFORLIGHTMODULATIONSYSTEM

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

IS440F

OPICLIGHTDETECTORWITHBUILTINSIGNALPROCESS-INGCURCUITFORLIGHTMODULATIONSYSTEM

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

ISCN440P

iscSiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=60V(Min.) ·LowCollectorSaturationVoltage :VCE(sat)=1.1V(Max.)@IC=5A ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Designedforlowfrequencypoweramplifierapplicatio

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

JXWBHP-M440

BroadbandMillimeterMixer6to40GHz

AACAmerican Accurate Components, Inc.

美国精密部件公司美国精密元件有限公司

供应商型号品牌批号封装库存备注价格
WCH
1936
SOP-16
27000
询价
WCH(南京沁恒)
2020+
原厂原装正品
8000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
WCH(南京沁恒)
2021+
原厂原封装
93628
原装进口现货 假一罚百
询价
WCH
21+
SOP16
26982
专营原装正品现货,当天发货,可开发票!
询价
WCH(南京沁恒)
21+
10560
十年专营,原装现货,假一赔十
询价
WCH/沁恒
22+23+
SOP
61583
假一罚十全新原装现货0755-82732291
询价
WCH
23/22+
SOP16
141
代理渠道.实单必成
询价
WCH
1408+
SOP16
9500
绝对原装进口现货可开增值税发票
询价
WCH
2017+
SOP-16
45896
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
WCH
19+
SOP-16
67850
原厂代理渠道,每一颗芯片都可追溯原厂;
询价
更多CH440G供应商 更新时间2024-5-11 15:00:00