8 W, 6.0 GHz, GaN HEMT Die

Description Wolfspeed’s CGH60008D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs

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8 W, 6.0 GHz, GaN HEMT Die

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8 W; 6.0 GHz; GaN HEMT Die

The CGH60008D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity; and higher thermal conductivity. GaN HEMTs offer greater power density ·8 W Typical PSAT @ 28 V Operation\n·5 W Typical PSAT @ 20 V Operation\n·High Breakdown Voltage\n·High Temperature Operation\n·Up to 6 GHz Operation\n·High Efficiency;

MACOM

Package：模具；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF MOSFET HEMT 28V DIE

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