CG2H80015D数据手册分立半导体产品的晶体管-FETMOSFET-射频规格书PDF

描述 Description

Wolfspeed’s CG2H80015D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors.