15 W, 8.0 GHz, GaN HEMT Die

Description Wolfspeed’s CG2H80015D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs

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WOLFSPEED

15 W, 8.0 GHz, GaN HEMT Die

文件：629.9 Kbytes 页数：9 Pages

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15-W, 8.0-GHz, GaN HEMT Die

Wolfspeed’s CG2H80015D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs offer greater powe

MACOM

Package：模具；包装：散装 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF DISCRETE

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