10-W RF Power GaN HEMT

Up to 8 GHz Operation18 dB Small Signal Gain at 2.0 GHz16 dB Small Signal Gain at 4.0 GHz17 W typical PSAT70% Efficiency at PSAT28 V Operation • Up to 8 GHz Operation\n• 18 dB Small Signal Gain at 2.0 GHz\n• 16 dB Small Signal Gain at 4.0 GHz\n• 17 W typical PSAT\n• 70% Efficiency at PSAT\n• 28 V Operation;

MACOM

包装：盒 类别：开发板，套件，编程器 射频评估和开发套件，开发板 描述：CG2H40010F DEV BOARD WITH HEMT

WOLFSPEED

10 W, DC - 6 GHz, RF Power GaN HEMT

Cree’s CG2H40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high effciency, high gain and wide bandwidth c

文件：2.18476 Mbytes 页数：14 Pages

Cree

科锐

10 W, DC - 6 GHz, RF Power GaN HEMT

Cree’s CG2H40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high effciency, high gain and wide bandwidth c

文件：2.18476 Mbytes 页数：14 Pages

Cree

科锐

10 W, DC - 8 GHz, RF Power GaN HEMT

Description Wolfspeed’s CG2H40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gai

文件：1.20907 Mbytes 页数：14 Pages

WOLFSPEED

10 W, DC - 6 GHz, RF Power GaN HEMT

Cree’s CG2H40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high effciency, high gain and wide bandwidth c

文件：2.18476 Mbytes 页数：14 Pages

Cree

科锐