10-W RF Power GaN HEMT

Up to 8 GHz Operation18 dB Small Signal Gain at 2.0 GHz16 dB Small Signal Gain at 4.0 GHz17 W typical PSAT70% Efficiency at PSAT28 V Operation • Up to 8 GHz Operation\n• 18 dB Small Signal Gain at 2.0 GHz\n• 16 dB Small Signal Gain at 4.0 GHz\n• 17 W typical PSAT\n• 70% Efficiency at PSAT\n• 28 V Operation;

MACOM

10 W, DC - 6 GHz, RF Power GaN HEMT

Cree’s CG2H40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high effciency, high gain and wide bandwidth c

文件：2.18476 Mbytes 页数：14 Pages

CREE

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Package：440196；包装：散装 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：10W, GAN HEMT, 28V, DC-4.0GHZ, P

WOLFSPEED

10 W, DC - 6 GHz, RF Power GaN HEMT

Cree’s CG2H40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high effciency, high gain and wide bandwidth c

文件：2.18476 Mbytes 页数：14 Pages

CREE

科锐

10 W, DC - 8 GHz, RF Power GaN HEMT

Description Wolfspeed’s CG2H40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gai

文件：1.20907 Mbytes 页数：14 Pages

WOLFSPEED

10 W, DC - 6 GHz, RF Power GaN HEMT

Cree’s CG2H40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high effciency, high gain and wide bandwidth c

文件：2.18476 Mbytes 页数：14 Pages

CREE

科锐