N-Channel Enhancement Mode Field Effect Transistor

FEATURES 700V@TJ max, 38A, RDS(ON) = 0.1W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-247 package. RoHS compliant. Fast reverse recovery time.

文件：432.09 Kbytes 页数：5 Pages

CET-MOS

华瑞

N-Channel Super Junction Power MOSFET

文件：514.26 Kbytes 页数：6 Pages

HMSEMI

华之美半导体

N-channel Enhanced mode TO-247 MOSFET

文件：819.74 Kbytes 页数：6 Pages

SEMIPOWER

芯派科技

N-channel Enhanced mode TO-247 MOSFET

文件：838.21 Kbytes 页数：6 Pages

SEMIPOWER

芯派科技