CEP38N65SF资料使用说明书批发供应华瑞-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
CEP38N65SF	文件：512.97 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. Fast reverse recovery time. 文件：512.97 Kbytes 页数：5 Pages	CET-MOS 华瑞	CET-MOS
CEP38N65SF	文件：300 bytes Page：1 Pages	N Channel MOSFET	CET 华瑞	CET
CEW38N65SA	文件：456.61 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES 700V@TJ max, 39A, RDS(ON) = 0.095W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-247 package. RoHS compliant. 文件：456.61 Kbytes 页数：5 Pages	CET-MOS 华瑞	CET-MOS
CEW38N65SF	文件：432.09 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES 700V@TJ max, 38A, RDS(ON) = 0.1W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-247 package. RoHS compliant. Fast reverse recovery time. 文件：432.09 Kbytes 页数：5 Pages	CET-MOS 华瑞	CET-MOS
HMS38N65T	文件：514.26 Kbytes Page：6 Pages	N-Channel Super Junction Power MOSFET 文件：514.26 Kbytes 页数：6 Pages	HMSEMI 华之美半导体	HMSEMI

更多CEP38N65SF供应商更新时间2025-10-6 10:05:00