N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 125A, RDS(ON) = 3.2mΩ @VGS = 10V. RDS(ON) = 7.0mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：416.45 Kbytes 页数：4 Pages

CET

华瑞

N Channel Product

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 150A, RDS(ON) = 3.0 mW @VGS = 10V. RDS(ON) = 6.0 mW @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

文件：400.41 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 125A, RDS(ON) = 3.2mΩ @VGS = 10V. RDS(ON) = 7.0mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：416.45 Kbytes 页数：4 Pages

CET

华瑞

N-Channel MOSFET uses advanced trench technology

文件：1.68067 Mbytes 页数：5 Pages

DOINGTER

杜因特