P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V, -16A, RDS(ON) = 86mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 125mW @VGS = -4.5V. RoHS compliant.

文件：428.04 Kbytes 页数：5 Pages

CET-MOS

华瑞

P Channel MOSFET

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V, -13.5A, RDS(ON) = 86mW @VGS = -10V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. RDS(ON) = 125mW @VGS = -4.5V.

文件：941.71 Kbytes 页数：6 Pages

CET-MOS

华瑞

P-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 60 Volts CURRENT 4.3 Ampere FEATURE * Small flat package. (SO-8 ) * Super high dense cell design for extremely low RDS(ON). * High power and current handing capability. * Lead free product is acquired. APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switchi

文件：212.92 Kbytes 页数：2 Pages

CHENMKO

力勤

P-channel and N-channel Complementary MOSFETS

文件：803.2 Kbytes 页数：2 Pages

ZPSEMIZP Semiconductor

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