P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -20A, RDS(ON) = 45mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 80mW @VGS = -4.5V. RoHS compliant.

文件：940.27 Kbytes 页数：5 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 12A, RDS(ON) = 95mΩ @VGS = 10V. RDS(ON) = 130mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：208.67 Kbytes 页数：4 Pages

CET

华瑞

N-Channel MOSFET uses advanced trench technology

文件：993.67 Kbytes 页数：4 Pages

DOINGTER

杜因特

CED30N08

文件：577.79 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

文件：415.04 Kbytes 页数：4 Pages

CET

华瑞

N-Channel MOSFET uses advanced trench technology

文件：881.12 Kbytes 页数：5 Pages

DOINGTER

杜因特

P-Channel Enhancement Mode Field Effect Transistor

文件：447.73 Kbytes 页数：4 Pages

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

文件：400.03 Kbytes 页数：4 Pages

CET

华瑞

CEU SERIES

文件：1.98285 Mbytes 页数：1 Pages

TDK

东电化

Automotive Grade ( Serial Design )

文件：139.1 Kbytes 页数：1 Pages

TDK

东电化