CEU04N7G数据手册供应价格华瑞CET-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
CEU04N7G	文件：399.75 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 700V, 3.5A, RDS(ON) = 3.3Ω @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package. 文件：399.75 Kbytes 页数：4 Pages	CET 华瑞	CET
CEU04N7G	文件：613.64 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES 700V, 3.5A, RDS(ON) = 3.3W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead free product is acquired. 文件：613.64 Kbytes 页数：4 Pages	CET-MOS 华瑞	CET-MOS
CEU04N7G	文件：300 bytes Page：1 Pages	N Channel MOSFET	CET 华瑞	CET
BCC04N7	文件：96.02 Kbytes Page：2 Pages	Single-Ended Cordsets Basic features Approval/Conformity CE EAC WEEE 文件：96.02 Kbytes 页数：2 Pages	Balluff 巴鲁夫	Balluff
CEB04N7	文件：132.54 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor 文件：132.54 Kbytes 页数：4 Pages	CET 华瑞	CET
CEB04N7G	文件：424.28 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. 文件：424.28 Kbytes 页数：4 Pages	CET 华瑞	CET

更多CEU04N7G供应商更新时间2025-12-24 9:04:00