P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -40V, -4.9A, RDS(ON) = 57mΩ @VGS = -10V. RDS(ON) = 85mΩ @VGS = -4.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ SOT-223 package.

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CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

CET

华瑞

NPN Switching Transistor

VOLTAGE 40 Volts CURRENT 0.6 Ampere FEATURE * Small flat package. ( SOT-23 ) * Low current (Max.=600mA). * Suitable for high packing density. * Low voltage (Max.=40V) . * High saturation current capability. * Voltage controlled small signal switch. APPLICATION * Telephony and proferssiona

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CHENMKO

力勤

NPN Switching Transistor

VOLTAGE 40 Volts CURRENT 0.6 Ampere FEATURE * Small surface mounting type. (SC-88/SOT-363) * Low current (Max.=600mA). * Suitable for high packing density. * Low voltage (Max.=40V) . * High saturation current capability. * Voltage controlled small signal switch. APPLICATION * Telephony an

文件：165.53 Kbytes 页数：4 Pages

CHENMKO

力勤

NPN Switching Transistor

VOLTAGE 40 Volts CURRENT 0.6 Ampere FEATURE * Small surface mounting type. (SC-75/SOT-416) * Low current (Max.=600mA). * Suitable for high packing density. * Low voltage (Max.=40V) . * High saturation current capability. * Voltage controlled small signal switch. APPLICATION * Telephony an

文件：248.45 Kbytes 页数：6 Pages

CHENMKO

力勤