N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 600V, 1A, RDS(ON) = 9.3Ω @VGS = 10V. ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：414.42 Kbytes 页数：4 Pages

CET

华瑞

N Channel Product

CET

华瑞

Inductive Sensors

BES 517-398-NO-C-05 Basic features Approval/Conformity CE UKCA cULus WEEE Basic standard IEC 60947-5-2

文件：106.42 Kbytes 页数：2 Pages

Balluff

巴鲁夫

N-Channel Enhancement Mode Field Effect Transistor

文件：85.87 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired.

文件：374.19 Kbytes 页数：4 Pages

CET

华瑞