N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 150V, 2A, RDS(ON) = 440mΩ @VGS = 10V. RDS(ON) = 580mΩ @VGS = 6V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead-free plating ; RoHS compliant. ■ SOT-223 package.

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 100V, 3A, RDS(ON) = 200mΩ @VGS = 10V. RDS(ON) = 280mΩ @VGS = 6V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ SOT-223 package.

文件：397.36 Kbytes 页数：4 Pages

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N Channel MOSFET

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N Channel MOSFET

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一体成型电感

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