N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件：513.429 Kbytes 页数：5 Pages

CET-MOS

华瑞

N Channel MOSFET

CET

华瑞

N-Ch 150V Fast Switching MOSFETs

General Description Advanced Trench MOS Technology Low Gate Charge Low RDS(ON) 100 EAS Guaranteed Green Device Available Applications Load Switch LED Applications Networking Applications Quick Charger

文件：497.02 Kbytes 页数：4 Pages

FETEK

台湾东沅

N-Ch 150V Fast Switching MOSFETs

General Description ⚫ Advanced Trench MOS Technology ⚫ Low Gate Charge ⚫ Low RDS(ON) ⚫ 100 EAS Guaranteed ⚫ Green Device Available Applications ⚫ Load Switch ⚫ LED Applications ⚫ Networking Applications ⚫ Quick Charger

文件：499.62 Kbytes 页数：4 Pages

FETEK

台湾东沅

N-Channel Power MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Features • 90A, 150V, RDS(on) = 0.018Ω @VGS = 10 V • Low gate charge (typical 220 nC) • Low Crss (typical 200 pF) • Fast switching • 1

文件：749.16 Kbytes 页数：8 Pages

Fairchild

仙童半导体