CEP25A04

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 40V,200A,RDS(ON)=2.3mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RDS(ON)=2.5mW@VGS=9V. RoHScompliant.

CEP25A04

N Channel MOSFET;

AR25A04

SiliconRectifier

CEB25A04

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 40V,200A,RDS(ON)=2.3mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RDS(ON)=2.5mW@VGS=9V. RoHScompliant.

FG25A04

25.0Amps.GlassPassivatedPowerRectifiersHighreliability