Silicon Rectifier

文件：152.91 Kbytes 页数：2 Pages

YANGJIE

扬杰电子

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 40V, 200A, RDS(ON) = 2.3 mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RDS(ON) = 2.5 mW @VGS = 9V. RoHS compliant.

文件：448.77 Kbytes 页数：5 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 40V, 200A, RDS(ON) = 2.3 mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RDS(ON) = 2.5 mW @VGS = 9V. RoHS compliant.

文件：448.77 Kbytes 页数：5 Pages

CET-MOS

华瑞

25.0 Amps. Glass Passivated Power Rectifiers High reliability

文件：192.23 Kbytes 页数：2 Pages

FCI

富加宜