N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 4.8A, RDS(ON) = 34mW @VGS = 10V. RDS(ON) = 40mW @VGS = 4.5V. RDS(ON) = 45mW @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-23-T package. RoHS compliant. RDS(ON) = 60mW @VGS = 1.8V.

文件：911.11 Kbytes 页数：5 Pages

CET-MOS

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -4A, RDS(ON) = 50mW @VGS = -10V. RDS(ON) = 85mW @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-23-T package. RoHS compliant

文件：923.36 Kbytes 页数：5 Pages

CET-MOS

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V, -3.7A, RDS(ON) = 60mW @VGS = -4.5V. RDS(ON) = 80mW @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-23-T package. RoHS compliant.

文件：622.72 Kbytes 页数：4 Pages

CET-MOS

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V, -3.9A, RDS(ON) = 52mW @VGS = -4.5V. RDS(ON) = 72mW @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-23-T package. RoHS compliant.

文件：431.12 Kbytes 页数：5 Pages

CET-MOS

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V, -3.2A, RDS(ON) = 78mW @VGS = -4.5V. RDS(ON) = 110mW @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-23-T package. RoHS compliant. RDS(ON) = 150mW @VGS = -1.8V.

文件：423.08 Kbytes 页数：5 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 3A, RDS(ON) = 80mW @VGS = 10V. RDS(ON) = 100mW @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-23-T package. RoHS compliant.

文件：930.07 Kbytes 页数：5 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 2.5A, RDS(ON) = 110mW @VGS = 10V. RDS(ON) = 130mW @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-23-T package. RoHS compliant.

文件：428.25 Kbytes 页数：5 Pages

CET-MOS

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V, -2A, RDS(ON) = 160mW @VGS = -10V. RDS(ON) = 208mW @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-23-T package. RoHS compliant.

文件：268.21 Kbytes 页数：5 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 0.25A, RDS(ON) = 3 W @VGS = 10V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-23-T package. Lead free product is acquired. RDS(ON) = 4 W @VGS = 4.5V.

文件：888.18 Kbytes 页数：4 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 0.25A, RDS(ON) = 3 Ω @VGS = 10V. RDS(ON) = 4 Ω @VGS = 4.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ SOT-23-T package.

文件：137.35 Kbytes 页数：4 Pages

CET

华瑞