SURFACE MOUNT HIGH CURRENT PNP SILICON TRANSISTOR

APPLICATIONS: • Motor control • Load switches • Display drives • Relay drives FEATURES: • High Voltage (140V) • High Thermal Efficiency • High Current (5.0A) • 3 x 3mm TLM™ case • Low VCE(SAT) (420mV MAX @ 4.0A)

文件：723.07 Kbytes 页数：4 Pages

CENTRAL

SURFACE MOUNT HIGH CURRENT PNP SILICON TRANSISTOR

APPLICATIONS: • Motor control • Load switches • Display drives • Relay drives FEATURES: • High Voltage (140V) • High Thermal Efficiency • High Current (5.0A) • 3 x 3mm TLM™ case • Low VCE(SAT) (420mV MAX @ 4.0A)

文件：723.07 Kbytes 页数：4 Pages

CENTRAL

SURFACE MOUNT HIGH CURRENT PNP SILICON TRANSISTOR

APPLICATIONS: • Motor control • Load switches • Display drives • Relay drives FEATURES: • High Voltage (140V) • High Thermal Efficiency • High Current (5.0A) • 3 x 3mm TLM™ case • Low VCE(SAT) (420mV MAX @ 4.0A)

文件：723.07 Kbytes 页数：4 Pages

CENTRAL

SURFACE MOUNT HIGH CURRENT PNP SILICON TRANSISTOR

APPLICATIONS: • Motor control • Load switches • Display drives • Relay drives FEATURES: • High Voltage (140V) • High Thermal Efficiency • High Current (5.0A) • 3 x 3mm TLM™ case • Low VCE(SAT) (420mV MAX @ 4.0A)

文件：723.07 Kbytes 页数：4 Pages

CENTRAL

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V, -2.7A, RDS(ON) = 110mW @VGS = -4.5V. RDS(ON) = 160mW @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-23-T package. Lead-free plating ; RoHS compliant.

文件：550.11 Kbytes 页数：4 Pages

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P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V, -3A, RDS(ON) = 90mW @VGS = -4.5V. RDS(ON) = 120mW @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-23-T package. RoHS compliant.

文件：926.25 Kbytes 页数：5 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V, 4.1A, RDS(ON) = 45mW @VGS = 4.5V. RDS(ON) = 55mW @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-23-T package. RoHS compliant. RDS(ON) = 110mW @VGS = 1.8V.

文件：667.9 Kbytes 页数：5 Pages

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P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -3.2A, RDS(ON) = 78mW @VGS = -10V. RDS(ON) = 120mW @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-23-T package. Lead-free plating ; RoHS compliant.

文件：649.55 Kbytes 页数：4 Pages

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P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -3.7A, RDS(ON) = 60mW @VGS = -10V. RDS(ON) = 82mW @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-23-T package. RoHS compliant.

文件：485.15 Kbytes 页数：5 Pages

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P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -3.4A, RDS(ON) = 70mW @VGS = -10V. RDS(ON) = 108mW @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-23-T package. RoHS compliant.

文件：536.15 Kbytes 页数：5 Pages

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